Mitsubishi Electric announced that it will launch a 50 W silicon radio-frequency (RF) high-power metal-oxide-semiconductor field-effect transistor (MOSFET) module for use in high-frequency power amplifiers of commercial two-way radios on August 1. The model, which offers an industry-leading 50 W power output in the 763 MHz to 870 MHz band and high total efficiency of 40%, is expected to help expand the radio communication range and reduce power consumption.

The 150 MHz and 400 MHz frequency bands used for various wireless systems have become congested in North America and other markets, so in response, the 700 MHz band, formerly used for analog TV broadcasting, has been reallocated for commercial two-way radio, increasing the demand for radios that support this band. Conventional power amplifiers, however, experience large power loss, so there is a need for RF high-power MOSFET modules offering built-in input/output impedance-matching circuits and guaranteed output-power performance. The new silicon RF high-power MOSFET (RA50H7687M1), which achieves unmatched power output and high total efficiency for commercial radios compatible with the 700 MHz band, is expected to expand the communication range and lower the power consumption of such radios.