II-VI Incorporated, a leader in wide-bandgap compound semiconductors, announced that it closed an over $100 million contract to supply Dongguan Tianyu Semiconductor Technology with 150 mm silicon carbide substrates to be delivered beginning this quarter and through the end of the calendar year 2023.

The electrification of the transportation infrastructure and industrial equipment is accelerating a market transition to power electronics based on silicon carbide (SiC), a third-generation or wide-bandgap semiconductor. SiC enables power electronics to be smaller and more efficient, with a lower total system-level cost of ownership than state-of-the-art silicon-based devices. Tianyu, one of China's first and largest SiC epitaxial wafer manufacturers, has signed a long-term supply contract with II-VI, with upfront payments, to secure 150 mm SiC substrate capacity that will meet its demand through the calendar year 2023.

To meet the market demand in Asia, II-VI established 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in Fuzhou, China. Tianyu will benefit from II-VI's 150 mm SiC global production capacity in both the U.S. and China.

Tianyu and II-VI will provide a high-quality and reliable supply chain and future 200 mm capability that will be critical to supporting the rapidly growing demand for SiC power electronics in the megamarkets of electric vehicles (EVs), renewable energy, smart grids, microgrids, and power supplies for data networks. Tianyu is well positioned to serve the power electronics market for EVs in China, today the largest in the world by far.

Given their broad range of applications, power electronics based on SiC have a highly beneficial impact on the environment by enabling significant reductions in carbon dioxide emissions and energy consumption.