The demand for power MOSFET in the automotive, energy, and consumer electronics industries has increased due to the necessity for compact and sophisticated automation solutions. The adoption of the power MOSFET market as a growing application is expected to accelerate with the advent of electric vehicles. Power MOSFET has been one of the renewable energy sources which are replacing conventional energy sources globally. In this article, everything PE has listed some interesting power MOSFETs that were trending on the website.
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N-Channel Power MOSFET for Switching Applications
The STB20N95K5 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 950 V, a gate-source voltage of up to 30 V, and a drain-source on-resistance of 275 mΩ. This power MOSFET has a continuous drain current of up to 17.5 A and power dissipation of less than 250 W. It is designed using MDmesh K5 technology that is based on an innovative proprietary vertical structure, thereby resulting in a dramatic reduction in on-resistance and total gate charge for applications requiring superior power density and high efficiency. Read more.
80 V N-Channel Trench FET Power MOSFET
The SiJH800E from Vishay is an N-Channel Trench FET Power MOSFET. It has a drain-source breakdown voltage of over 80 V, a gate-source voltage of up to +20 V, and a drain-source on-resistance of 1.2 mΩ. This power MOSFET has a continuous drain current of up to 299 A and power dissipation of less than 333 W. This RoHS complaint MOSFET is available in a through-hole package that measures 7.9 x 8 mm and is ideal for synchronous rectification, Or-ing, motor drive control, battery management, and power supply applications. Read more.
80 V N-Channel Enhancement MOSFET
The IAUS300N08S5N012T from Infineon Technologies is an N-Channel Enhancement Mode MOSFET that is specifically designed for automotive applications. It has a gate-source voltage of 20 V, a drain-source voltage of 80 V, and a drain-source resistance of 1.4 milli-ohms. This AEC-Q101 qualified MOSFET has a drain current of 300 A and power consumption of up to 375 W. It has a gate charge of 178 nC and is available in a through-hole package. Read more.
650 V N-Channel Enhancement Mode SiC Power MOSFET
The C3M0120065J from Wolfspeed is an N-Channel Enhancement Mode SiC Power MOSET. It has a drain-source breakdown voltage of over 650 V, a drain-source voltage of up to 650 V, and a drain-source on-resistance of 120 mΩ. This power MOSFET has a continuous drain current of up to 21 A and power dissipation of less than 86 W. It is based on the 3rd generation SiC MOSFET technology that is capable of delivering higher system efficiency with increased power density and system switching frequency. This MOSFET has a high blocking voltage with low on-resistance and integrates a fast intrinsic diode with a low reverser recovery charge. Read more.
1200 V N-Channel Enhancement Mode SiC MOSFET
The CXT-PLA3SA12340A from Cissoid is an N-Channel Enhancement Mode SiC MOSFET that is ideal for electrical vehicle (EV) motor drives, heavy-duty motor drives, active rectifiers, and industrial motor drive applications. It has a drain-to-source breakdown voltage of over 1200 V and a drain-source on-resistance of 4.19 mΩ. This power MOSFET has a gate threshold voltage of 2.2 V, a continuous drain current of up to 340 A, and a pulsed drain current of less than 720 A. It uses SiC technology to achieve high efficiency, high power density, and high reliability and simultaneously provides low switching losses and high-temperature junction. The MOSFET is integrated with a gate driver that offers desaturation protection, under-voltage lockout (UVLO), active miller clamping (AMC), and soft shutdown turn-off (SSD) to prevent false operation and over-voltage-related damages. It is available in a surface-mount package that measures 104 x 154 x 34 mm. Read more.
600 V N-Channel Enhancement MOSFET
The AONV110A60 from Alpha and Omega Semiconductor is an N-Channel Enhancement Mode Power MOSFET. This single-channel power MOSFET has a gate-source voltage of ±20 V with a drain-source voltage of 600 and a drain-source resistance of fewer than 0.11 ohms. It has a continuous drain current of 35 A and a pulsed drain current of 140 A. It has a gate charge of 72 nC and power dissipation of up to 357 W. This MOSFET is based on a proprietary aMOS5 technology that offers a low on-state resistance with optimized switching parameters for better EMI performance. It consists of an enhanced body diode to provide robustness and fast reverse recovery. This power MOSFET is available in a surface-mount package and is ideal for PFC and PWM stages (LLC, FSFB, TTF) of server, telecom, industrial, UPS, and solar inverters applications. Read more.
30 V N-Channel Enhancement MOSFET
The ISK036N03LM5 from Infineon Technologies is an N-Channel Enhancement Mode Power MOSFET. It has a gate-source voltage of ± 16 V and a gate threshold voltage of 1.2-2 V. This MOSFET has a drain-source breakdown voltage of over 30 V and a drain-source resistance of 2.4-4.6 mΩ. It has a power dissipation of 2.1 to 11 W. This MOSFET has a continuous drain current of 16.5-44 A and a pulsed drain current of 174 A. It offers superior thermal resistance and has the lowest drain-source on-state resistance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 2 x 2 x 0.65 mm and is ideal for chargers, consumer appliances, server and telecom power supplies, drones, and wireless charging applications. Read more.
Dual N Channel Power MOSFET for Battery Protection Circuits
The SSM10N954L from Toshiba is a Dual N-Channel Power MOSFET that is specifically designed for battery protection circuits. It has a source-source breakdown voltage of over 12 V, a gate threshold voltage of 1.4 V, and a source resistance of 2.1-2.4 milli-ohms. This RoHS-compliant MOSFET has a power dissipation of up to 0.8 W and offers low source-source on-resistance. It is available in a surface-mount package that measures 2.98 x 1.49 x 0.11 mm. Read more.
650 V N Channel Enhancement Mode SiC MOSFET
The IMBG65R083M1H from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of over 650 V with a drain-source resistance of 83 mΩ and a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of up to 28 A and power consumption of less than 126 W. It has a gate charge of 19 nC. This MOSFET is built on state-of-the-art Infineon’s SiC trench technology and is used in mid-power applications. It is optimized to enable max system performance, compactness, and reliability. This MOSFET is suitable for bi-directional topologies with continuous hard commutation and is compatible with standard drivers. Read more.
P-Channel Enhancement Mode MOSFET for Load Switches
The RQ5C030TP from ROHM Semiconductor is a P Channel Enhancement Mode MOSFET that is suitable for load switch applications. It has a drain-source breakdown voltage of -20 V with a drain-source resistance of up to 75 mO and a gate threshold voltage of – 2 V. This small-signal MOSFET has a continuous drain current of ±3A and a pulsed drain current of ±12 A. It has a power dissipation of up to 1 W. This RoHS-compliant MOSFET offers low on-state resistance and has an in-built G-S protection diode. It is available in a surface-mount package that measures 2.9 x 2.8 x 1 mm. Read more.
1200 V N-Channel Enhancement Mode SiC MOSFET
The IMW120R014M1H from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of 1200 V with a drain-source resistance of 14 mΩ and a gate threshold voltage of 4.2 V. This MOSFET has a continuous drain current of up to 127 A and power consumption of less than 455 W. It is built on state-of-the-art Infineon’s SiC trench technology and is used in mid-power applications. This MOSFET is optimized to enable maximum system performance, compactness, and reliability. It is suitable for bi-directional topologies with continuous hard commutation and is compatible with standard drivers. It is available in a through-hole package and is ideal for general-purpose drives (GPD), EV charging, online UPS, string inverters, and solar power applications. Read more.
1200 V N-Channel Enhancement Mode SiC MOSFET
The GCMX080B120S1-E1 from SemiQ is an N-Channel Enhancement Mode SiC MOSFET that is designed for PFC boost converter, DC-DC converter primary switching, and synchronous rectification. It has a drain-source breakdown voltage of over 1200 V and a drain-source resistance of 77 milliohms. This MOSFET has a gate threshold voltage of 2.8 V and a power dissipation of up to 142 W. It has a continuous drain current of 30 A and a pulsed drain current of 80 A. The MOSFET consists of silicon carbide (SiC) Schottky diode that delivers optimum performance without any trade-offs made with silicon devices. It offers high-speed switching operation with low switching losses and provides a simple drive mechanism. Read more.
1700 V N-Channel Enhancement Mode SiC MOSFET
The IMBF170R1K0M1 from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source voltage of 1700 V with drain-source resistance of 1000 milliohms, and a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of 5.2 A and a pulsed drain current of 13.3 A. It is based on a single-ended fly-back topology and offers high efficiency making it ideal for use in auxiliary power supplies. This RoHS-compliant MOSFET has extremely low switching loss and a fully controllable dv/dt for EMI optimization. It is available in a surface-mount package and is ideal for energy storage systems, fast EV charging, industrial motor drives and controls, power management (SMPS) - reference design, and solutions for solar energy systems applications. Read more.
40 V N-Channel Enhancement Mode MOSFET
The PSMNR70-40SSH from Nexperia is an N-Channel Enhancement Mode MOSFET. It has a gate-source voltage of ± 20 V and a gate threshold voltage of 2.4-3.6 V. This MOSFET has a drain-source breakdown voltage of 40 V and a drain-source resistance of up to 0.7 milli-ohms. It has a power dissipation of 375 W and a continuous drain current of up to 425 A. It is fabricated using Nexperia’s “SchottkyPlus” technology and delivers high efficiency and low spiking performance. This avalanche-rated MOSFET is integrated with a Schottky diode and has a low leakage current. It offers superfast switching with soft body-diode recovery for low-spiking and ringing. This MOSFET is available as a surface-mount package that measures 8 x 8 mm and is ideal for brushless DC motor control, battery protection, eFuse & load switch, hot-swap/in-rush current management, and synchronous rectifier in high-power AC-DC applications such as server power supplies. Read more.
600 V N-Channel Silicon Power MOSFET
The STP60N043DM9 from STMicroelectronics is an N-Channel Silicon Power MOSFET that is designed for LLC resonant converter, power supplies & converter applications. It is developed using an innovative super-junction MDmesh DM9 technology. This technology is suitable for medium/high voltage MOSFETs which have a very low drain-source resistance per area coupled with a fast-recovery diode. It has a gate-source voltage of ± 30 V and a gate threshold voltage of up to 4.5 V. This MOSFET has a drain-source breakdown voltage of 600 V and a drain-source resistance of up to 43 mΩ. It has a power dissipation of 245 W and a continuous drain current of up to 56 A. This MOSFET consists of a fast-recovery diode that offers a very low recovery charge, recovery time, and drain-source resistance. This feature enables the MOSFET to be used for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. It has a low gate charge, input capacitance, and resistance. This MOSFET is available as a through-hole package. Read more.
600 V N Channel Enhancement Mode MOSFET
The R6077VNZ4 from ROHM Semiconductor is an N-Channel Enhancement Mode Power MOSFET. This Power MOSFET has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 5.5 V, and a drain-source resistance of 42 milliohms. It has a continuous drain current of up to 77 A and a pulsed drain current of less than 231 A. This MOSFET has a power dissipation of up to 781 W. It has a fast recovery time, low on-state resistance, fast switching speed, and can drive circuits easily. This RoHS-compliant MOSFET is available as a through-hole package that measures 15.64 x 40.42 mm and is ideal for use in high-speed switching applications. Read more.
N Channel Enhancement Mode MOSFET for Switching Applications
The STP65N045M9 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 650 V, a gate-source threshold voltage of 3.7 V, and a drain-source resistance of fewer than 45 milliohms. This Power MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of 170 A. It has a power dissipation of up to 245 W. This MOSFET uses the most innovative silicon-based super-junction MDmesh M9 technology that is designed through a multi-drain manufacturing process thereby offering an enhanced device structure. It is available in a through-hole package that measures 10 mm x 28.90 mm and is ideal for high-efficiency switching applications. Read more.
1200 V N Channel Enhancement Mode SiC MOSFET
The 5SFG 0580B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of 2.4 V. It has a drain-source breakdown voltage of less than 1200 V and a drain-source on-state resistance of 2.9 milliohms. This SiC MOSFET has a continuous drain current of up to 580 A and a pulsed drain current of 1160 A. It consists of a pin-fin structure that provides the lowest thermal resistance with enhanced liquid cooling performance. This SiC MOSFET has the lowest overall stray inductance thereby enabling efficient converter designs. It uses very easy and low inductive connections that allow the current rating of inverters to be scaled up with just one module type. Read more.
1200 V N-Channel SiC MOSFET for Voltage Regulator Applications
The TW015N120C from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 20 mΩ. This power MOSFET has a continuous drain current of up to 100 A and power dissipation of less than 431 W. It is based on Toshiba’s 3rd generation chip design that consists of a built-in SiC-based Schottky barrier diode with a low forward voltage. This MOSFET has a high threshold voltage to ensure less susceptibility to malfunction or over-voltage-related damages. It is available in a through-hole package that measures 15.94 x 41.02 mm. Read more.
650 V N-Channel SiC MOSFET for Switching Regulator Applications
The TW015N65C from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 21 mΩ. This MOSFET has a continuous drain current of up to 100 A and power dissipation of less than 342 W. It is based on Toshiba’s 3rd generation chip design that integrates a SiC-based Schottky barrier diode with a low forward voltage. This SiC MOSFET has a high threshold voltage to ensure less susceptibility to malfunctions or short-circuit-related damages. It is available in a through-hole package that measures 15.94 x 41.02 mm. Read more.
