Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced new low RDS(on) 650 V E-mode GaN HEMT devices. The INN650D080BS power transistors have an on-resistance of 80 m? (60 m? typical) in a standard 8×8 DFN package, enabling higher power applications, for example in totem pole LLC architectures or fast battery-chargers.
Explains Yi Sun, Sr VP of product development at Innoscience: “We are now able to address high density, high efficiency power conversion applications. Like all our other 650 V HEMTs, these new GaN transistors are qualified to JEDEC standards for chip and package, and they have also passed DHSOL (Dynamic High Temperature Operating Life) reliability testing according to JEP180 and accelerated life tests up to 1000 V give lifetime calculations of 36 years (520 V; 150°C; 0.01% failure rate).”
Thanks to Innoscience’s innovative strain enhancement layer, InnoGaN devices features low specific RDS(ON) as well as very low dynamic RDS(ON) and excellent reliability. The new 80 m? RDS(on) parts also feature very good drain source voltage transient (VDS, transient) and pulsed (VDS, pulsed) characteristics – 800 V and 750 V respectively. Moreover, similarly to the other 650 V products, the new 80 m? RDS(on) devices feature a strong ESD protection circuit embedded in the die to ease mass production assembly of these device in package and easy handling. In this case, however, the ESD circuit has been modified to allow a larger negative gate voltage swing down to -6 V.
The new low RDS(on) INN650D080BS power transistors, which are available in industry-standard 8×8 DFN packages, join previously-announced 140 m?,190 m?, 240 m?, 350 m?, 500 m? and 600 m? RDS(on) parts, creating a significant portfolio of available devices, which is continuously expanding towards lower RDS(on) values.
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