GaN (Gallium Nitride) transistor is a type of field-effect transistor (FET) that uses gallium nitride as the semiconductor material for its channel. GaN transistors are in high demand due to several key advantages they offer in comparison to traditional silicon-based transistors. The reasons for the growing demand for GaN transistors include high efficiency, high-frequency operation, compact size and high power density, high-temperature operation and wide bandgap. In this article, everything PE has listed some interesting GaN (Gallium Nitride) transistors that were trending on the website.

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650 V GaN Field Effect Transistor for Datacom Applications

The TP65H070G4RS-TR from Transphorm is a GaN Field Effect Transistor that is ideal for datacom, broad industrial, PV inverter, servo motor, and computing applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 85 milli-ohms. This FET has a continuous drain current of up to 29 A and a pulsed drain current of less than 120 A. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 9.26 x 10 mm. Read more.

Enhancement Mode GaN-on-Si Power Transistor for Fast Charging Applications

The INN650D140A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for AC-DC converters, DC-DC converters, and totem poles PFC, fast battery charging, and high density and efficient power conversion applications. It has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of less than 140 mΩ. It has a continuous drain current of up to 17 A and a pulsed drain current of less than 32 A. This RoHS-compliant power transistor is available in a surface-mount package that measures 8 x 8 mm. Read more. 

650 V N-Channel Enhancement Mode GaN Transistor

The AONV070V65G1 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode GaN Transistor that is ideal for resonant topologies, server power supplies, and high-frequency converter applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.8 V, and a drain-source on-resistance of less than 90 milli-ohms. This transistor has a continuous drain current of up to 16 A and power dissipation of less than 125 W. It is based on a normally-off design and provides low inductance in a compact package. This GaN power transistor is available in a surface-mount package that measures 8 x 8 mm. Read more. 

40 V Enhancement Mode GaN Power Transistor 

The EPC2067 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. This transistor has a drain-to-source voltage of over 40 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of 1.3 milli-ohms. It has a continuous drain current of up to 69 A and a pulsed drain current of less than 409 A. This RoHS-compliant power transistor is available as a passivated die that measures 2.85 x 3.25 mm. Read more. 

400 V Enhancement Mode GaN Power Transistor

The IGT40R070D1 E8220 from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for class-D audio amplifier applications. This transistor has a drain-source breakdown voltage of 400 V, a gate threshold voltage of 1.2 V, and a drain-source resistance of 70 milli-ohms. It has a continuous drain current of up to 31 A and a pulsed drain current of less than 60 A . This power transistor is available in a surface-mount package that measures 11.67 x 9.9 mm. Read more.

AEC-Q100 Qualified GaN Power Transistor

The GAN039-650NBBA from Nexperia is an Automotive Qualified GaN Power Transistor that is ideal for automotive on-board-charger systems, automotive DC-DC, hard and soft switching converters for industrial and datacom power, bridgeless totem-pole PFC, PV and UPS inverters and servo motor drives applications. The transistor has a drain-source breakdown voltage of 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 33 milli-ohms.  It has a continuous drain current of 60 A. It is available in a surface-mount package that measures 12 x 12 x 2.5 mm. Read more.

650 V GaN-on-Si Power Transistor for Data Centers & Gaming Applications

The CGD65A055S2 from Cambridge GaN Devices is an Enhancement Mode GaN-on-Si Power Transistor that is designed to exploit the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronic applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 77 mΩ. The power transistor is available in a surface-mount package that measures 8 x 8 mm. Read more.

 100 V E-Mode GaN Power Transistor for Charging Applications

The GS61008P from GaN Systems is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of less than 100 V and a gate-source threshold voltage of 1.7 V. This GaN transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 140 A. It has a drain-source on-resistance of 7 mΩ. This RoHS 3 (6 + 4) compliant transistor is available as a die that measures 7.6 x 4.6 mm. Read more.

40 V GaN Power Transistor for Space Applications

The EPC7019G from EPC Space is a GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It has a gate threshold voltage of 0.8 to 2.5 V and a drain-source voltage of 40 V with a drain-source resistance of 3.7 milliohm. It has a gate-source voltage of -4 to 6 V. This GaN transistor has a continuous drain current of 95 A and a pulsed drain current of 530 A. It is available in a surface-mount package that measures 8.0 x 5.6 mm. Read more.

800 V GaN Power IC for Lighting & Telecom Applications

The NV6113 from Navitas Semiconductors is an Enhancement Mode GaN Power IC that is optimized for high-frequency, soft-switching topologies. It has a drain-source voltage of up to 800 V and a drain-source on-resistance of less than 420 milli-ohms. This RoHS-compliant GaN transistor has a continuous drain current of up to 5 A and a pulsed drain current of less than 10 A. It is available in a surface-mount package that measures 5 x 6 mm. Read more.

150 V N-Channel Enhancement Mode GaN Transistor

The GNE1040TB from ROHM Semiconductor is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for half bridge topologies, synchronous buck or boost converters, AC/DC converters (secondary side), Class D audio amplifiers, IR LEDs, and LD driver applications. It has a drain-source voltage of up to 150 V, a gate-source voltage from -2 V to 8 V, and a drain-source on-resistance of 40 milli-ohms. This RoHS-compliant GaN transistor has a continuous drain current of up to 10 A and a pulsed drain current of less than 50 A. It is available in a surface-mount package that measures 5.0 x 6.0 x 1.0 mm. Read more.

650 V Enhancement Mode GaN Power Transistor

The TSG65N068CE RVG from Taiwan Semiconductor is an Enhancement Mode GaN Power Transistor. The transistor has a drain-source breakdown voltage of 650 V and a gate threshold voltage of 1.7 V. It has a continuous drain current of 30 A and drain-source resistance of 50 milli-ohms. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 8 x 8 mm. Read more.

650 V GaN Power Transistor for Datacom Power Applications

The GAN039-650NBB from Nexperia is a GaN Power Transistor that is ideal for hard and soft switching converters for industrial and datacom power, bridgeless totem-pole PFC, PV and UPS inverters and servo motor drives. The transistor has a drain-source voltage of 650 V and a gate threshold voltage of 4 V. It has a continuous drain current of 58.5 A and a drain-source resistance of 33 milli-ohms. This GaN transistor is available in a surface-mount package that measures 12.15 x 12.15 x 2.75 mm. Read more.

650 V Enhancement Mode GaN Power Transistor

The SGT120R65AL from STMicroelectronics is an Enhancement Mode GaN Power Transistor. The transistor has a drain-source breakdown voltage of 650 V and a gate threshold voltage of 1.8 V. It has a continuous drain current of 15 A and drain-source resistance of 75 milli-ohms. This transistor is available in a surface-mount package that measures 6.6 × 5.3 × 1 mm and is ideal for adapters for tablets, notebooks, USB Type-C PD adapters, quick chargers, and wireless chargers. Read more.

200V N-channel Enhancement Mode GaN Power Transistors

The ISL73024SEH from Renesas is a GaN Power Transistor that is ideal for switching regulation, motor drives, relay drives, inrush protection and downhole drilling. The transistor has a drain-source breakdown voltage of 200 V and a gate threshold voltage of 2.5 V. It has a continuous drain current of 7.5 A and a drain-source resistance of 110 milli-ohms. This transistor is available in a surface-mount package that measures 2.796 × 0.98 × 0.815 mm. Read more. 

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Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of GaN transistors we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.