The AONV070V65G1 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode GaN Transistor that is ideal for resonant topologies, server power supplies, and high-frequency converter applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.8 V, and a drain-source on-resistance of less than 90 milli-ohms. This transistor has a continuous drain current of up to 16 A and power dissipation of less than 125 W. It is based on a normally-off design and provides low inductance in a compact package. This GaN power transistor offers ultra-low gate charge and zero reverse recovery charge. It is available in a surface-mount package that measures 8 x 8 mm.
