The INN100W800A-Q from Innoscience is an Automotive-Qualified Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for high power density DC-DC converters, Class-D audio, high-intensity headlamps, and LiDAR applications. This transistor has a drain-source voltage of up to 100 V, a gate threshold voltage of less than 1.1 V, and a drain-source on-resistance of 80 milli-ohms. It has a continuous drain current of up to 1.7 A and a pulsed drain current of less than 17 A.

This AEC-Q101-qualified GaN power transistor is based on GaN-on-Silicon E-mode HEMT technology which combines high performance, cost-effectiveness, and efficiency in a compact form factor, making it suitable for a wide range of high-power and high-frequency applications. It has zero reverse recovery charge and a very low gate charge to achieve high-frequency switching with reduced losses. This GaN-on-Silicon HEMT is available in a wafer-level package that measures 0.9 x 0.9 mm.