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GNP2070TD-ZTR

GaN Power Transistor by ROHM Semiconductor (7 more products)
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The GNP2070TD-ZTR from ROHM Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 1 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 70 to 161 milli-ohm, Continous Drain Current 13 to 27 A, Pulsed Drain Current 27 to 53 A. Tags: Surface Mount. More details for GNP2070TD-ZTR can be seen below.

Product Specifications

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Product Details

  • Part Number
    GNP2070TD-ZTR
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V, 13 to 27 A, Enhancement Mode GaN Power Transistor

General

  • Configuration
    Single
  • Industry
    Industrial, Commercial
  • Gate Threshold Voltage
    1 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    70 to 161 milli-ohm
  • Continous Drain Current
    13 to 27 A
  • Pulsed Drain Current
    27 to 53 A
  • Total Charge
    5.2 nC
  • Input Capacitance
    200 pF
  • Output Capacitance
    50 pF
  • Turn-on Delay Time
    5.9 ns
  • Turn-off Delay Time
    8 ns
  • Rise Time
    6.9 ns
  • Fall Time
    8.7 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TOLL-8N
  • Applications
    High Switching Frequency Converter, High Density Converter
  • Dimensions
    11.68 x 9.9 x 2.4 mm ( W x D x H)

Technical Documents
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