The EPC29215_55 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for DC/DC converters, BLDC motor drives, synchronous rectification for AC/DC and DC/DC and multi-level AC/DC power supplies applications. This transistor has a drain-source voltage of up to 200 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 8 milli-ohms. It has a continuous drain current of up to 32 A and a pulsed drain current of less than 162 A. This normally-off transistor offers zero reverse recovery with low gate charge to offer fast switching speed. It has high electron mobility and a low-temperature coefficient allows for low on-state drain-source resistance. It has a lateral device structure with integrated majority carrier diode that provides exceptionally low gate charge and zero reverse recovery charge. This GaN transistor is available as a die that measures 4.6 x 1.6 mm.