The INN150EQ032A from Innoscience is an Enhancement-Mode GaN-on-Silicon Power Transistor that is ideal for high-frequency DC-DC converters, solar systems optimizers and microinverters, PD chargers and PSU synchronous rectification, telecom power supplies, and motor driver applications. This transistor has a drain-source voltage of over 150 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of less than 3.9 milli-ohms. It has a continuous drain current of up to 100 A and a pulsed drain current of less than 260 A. This normally-off transistor is based on Innoscience's GaN-on-Silicon E-mode HEMT technology that reduces the drain-source on-resistance and gate charge to minimize significant power losses in industrial applications. It is available in a surface-mount package that measures 4 x 6 mm.