The GAN3R2-100CBEAZ from Nexperia is an Enhancement mode GaN FET that is ideal for high power density and high-efficiency power conversion, secondary stage AC-to-DC converters, high-frequency DC-to-DC converters in 48 V systems, fast battery charging, mobile phone, laptop, tablet, USB type-C chargers, datacom and telecom (AC-to-DC and DC-to-DC) converters, motor drives, LiDAR (non-automotive), and Class D audio amplifier applications. It has a drain-source breakdown voltage of over 100 V, a gate-source threshold voltage of up to 2.5 V, and a drain-source resistance of less than 3.2 milli-ohms. This GaN transistor has a drain current of up to 60 A and power dissipation of up to 394 W. It is a normally-off enhancement mode device that has been qualified for standard applications. This GaN FET offers ultra-high frequency switching capability, low gate charge, and low output charge. It has no body diode and includes electrostatic discharge protection (ESD) for the safety and reliability of operation. This GaN FET is available in a wafer-level package that measures 3.5 x 2.13 mm.