The TDG650E60BEP from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for AC-DC converters, motor drives, solar and wind power systems, battery management, traction drives, dc-dc converters, and bridgeless totem-pole PFC applications. This GaN transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of up to 60 milli-ohms. It has a continuous drain current of less than 60 A and a pulsed drain current of up to 120 A. This transistor is housed on a bottom-side cooled configuration and ensures a small PCB footprint, making it ideal for space-constrained designs. It is designed with a low inductance package, which ensures very low figure of merit (FOM) and excellent thermal management.

This transistor operates at very high switching frequencies and offers fast, controllable rise and fall times, making it suitable for various power conversion topologies like phase-shifted full bridge and synchronous buck or boost converters. It also supports reverse current capability with zero reverse recovery loss. This RoHS-compliant transistor has dual gate pads that facilitate optimal board layout. It is available in a PCB-mount package that measures 11.00 x 9.02 mm.