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CDA04N08X2S

GaN Power Transistor by EPC Space (45 more products)
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The CDA04N08X2S from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 13 to 16 milli-ohm, Continous Drain Current 8 A, Pulsed Drain Current 32 A. Tags: Die. More details for CDA04N08X2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDA04N08X2S
  • Manufacturer
    EPC Space
  • Description
    40 V, 8 A, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Space, Military, Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    13 to 16 milli-ohm
  • Continous Drain Current
    8 A
  • Pulsed Drain Current
    32 A
  • Total Charge
    2.8 nC
  • Input Capacitance
    312 pF
  • Output Capacitance
    270 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    Satellite EPS & Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    2.3 x 1.7 mm

Technical Documents
View details on the manufacturer's website
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