The NV6127 from Navitas Semiconductor is a GaN Power Transistor that is ideal for  AC-DC, DC-DC, DC-AC, QR flyback, ACF, buck, boost, half-bridge, full-bridge, LLC resonant, class D, PFC, wireless power, solar micro-inverters, LED lighting, TV SMPS, server and telecom applications. It has a drain-source voltage of up to 650 V and a drain-source on-resistance of 125 milli-ohms. This transistor has a continuous drain current of up to 12 A and a pulsed drain current of less than 24 A. It is a thermally enhanced version of the popular Navitas’s NV6117 650 V GaNFast power IC that is optimized for high-frequency and soft-switching topologies. This transistor's monolithic integration of FET, drive, and logic creates an easy-to-use "digital in, power out" high-performance powertrain building block, enabling designers to create the fastest, smallest, and most efficient integrated powertrain in the world.

The NV6127 offers the highest dV/dt immunity, a high-speed integrated drive, and industry-standard low-profile and low-inductance, allowing designers to exploit Navitas GaN technology with simple, quick, and dependable solutions for breakthrough power density and efficiency. This GaN transistor extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC, and other resonant converters to reach MHz+ frequencies at very high efficiencies and low EMI to achieve exceptional power densities. It is available in a surface mount package that measures 6 x 8 mm.