The NV6136A-RA from Navitas Semiconductor is an Enhancement Mode GaN Power Transistor that is ideal for AC-DC, DC-DC, DC-AC, QR flyback, ACF, buck, boost, half-bridge, full-bridge, LLC resonant, class D, PFC, wireless power, solar micro-inverters, LED lighting, TV SMPS, server and telecom applications. It has a drain-source voltage of up to 700 V and a drain-source on-resistance of less than 238 milli-ohms. This transistor has a continuous drain current of up to 8 A and a pulsed drain current of less than 16 A. It integrates a high-performance eMode GaN FET with an integrated gate drive to achieve unprecedented high-frequency and high-efficiency operation. This transistor enables real-time, accurate sensing of voltage, current, and temperature to improve overall performance and robustness. It has built-in lossless current sensing, which eliminates the need to utilize external current sensing resistors and enhances system efficiency.

This GaN transistor extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC, and other resonant converters to reach MHz+ frequencies at very high efficiencies and low EMI to achieve exceptional power densities. It is equipped with short-circuit and over-temperature protection to improve system robustness with an auto-standby mode that increases light, tiny, and no-load efficiency. It is available in a surface mount package that measures 8 x 6 mm.