The JANSH2N7674UFUBC from EPC Space is a Radiation Hardened Enhancement Mode GaN Transistor that has been designed for critical applications in space and other high-reliability environments. This transistor has a drain-source voltage of 60 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of up to 580 milli-ohms. It has a continuous drain current of 1 A and a pulsed drain current of 4 A. This GaN transistor has high electron mobility and a low temperature coefficient resulting in very low drain-source resistance values. Its lateral die structure provides a very low gate charge (QG) of 184 pC and extremely fast switching times. It features faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging.

This GaN transistor can operate under conditions of up to 100% of its rated breakdown voltage while maintaining immunity against the Single Event Effect (SEE) at a linear energy transfer (LET) threshold of 83.7 MeV/mg/cm². It is immune to both LDR (Low Dose Rate) and HDR (High Dose Rate) TID (Total Ionizing Dose) effects. This lightweight GaN transistor is capable of enduring up to 4 x 10^15 neutrons/cm² while maintaining its operational specifications. It is available in a compact hermetic surface-mount package that measures 3.251 x 2.743 x 2.083 mm and is ideal for commercial satellite EPS and avionics, deep space probes, high-speed rad-hard DC-DC conversion, rad-hard motor controller and nuclear applications.