Infineon Technologies Unveils High Side Gate Driver for Battery Powered Applications

Infineon Technologies Unveils High Side Gate Driver for Battery Powered Applications

Infineon has unveiled the EiceDRIVER 1EDL8011, a high-side gate driver specifically designed to enhance protection in battery-powered applications such as motor drives and switched-mode power supplies (SMPS).In applications like cordless power tools, robotics, e-bikes, and vacuum cleaners, a common requirement is the ability to disconnect modules from the main supply rail when a fault occurs. Infineon's new driver uses high-side disconnect switches, such as MOSFETs, to prevent load short circuits from impacting the battery, ensuring enhanced safety and reliability. This innovation aims to address the growing demand for efficient protection mechanisms in portable, battery-powered devices.

The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay, and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.

The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a V DS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.

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