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2N2906

Bipolar Junction Transistor by Comset Semiconductors (294 more products)
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2N2906 Image

The 2N2906 from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage -2.6 to -1.3 V, Emitter Cut off Current -50 nA, Collector Base Voltage -60 V, Collector Cut off Current -20 µA. Tags: Through Hole, PNP Transistor. More details for 2N2906 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2906
  • Manufacturer
    Comset Semiconductors
  • Description
    -60 V, -0.6 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -2.6 to -1.3 V
  • Emitter Cut off Current
    -50 nA
  • Collector Base Voltage
    -60 V
  • Collector Cut off Current
    -20 µA
  • Collector Emitter Breakdown Voltage
    -40 V
  • Collector Emitter Voltage
    -40 V
  • Continuous Collector Current
    -0.6 A
  • Pulse Collector Current
    -0.8 A
  • DC Current Gain
    20 to 120
  • Gain Bandwidth Product
    200 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.4 to 1.2 W
  • Output Capacitance
    8 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-18
  • Application
    High speed switching and general purpose applications

Technical Documents
View details on the manufacturer's website
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