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2DB1182Q-13

Bipolar Junction Transistor by Diodes Incorporated (105 more products)
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2DB1182Q-13 Image

The 2DB1182Q-13 from Diodes Incorporated is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Emitter Cut off Current -1 µA, Collector Base Voltage -40 V, Collector Cut off Current -1 µA, Collector Emitter Breakdown Voltage -32 V. Tags: Surface Mount, PNP Transistor. More details for 2DB1182Q-13 can be seen below.

Product Specifications

Product Details

  • Part Number
    2DB1182Q-13
  • Manufacturer
    Diodes Incorporated
  • Description
    -32 V, -2 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Emitter Cut off Current
    -1 µA
  • Collector Base Voltage
    -40 V
  • Collector Cut off Current
    -1 µA
  • Collector Emitter Breakdown Voltage
    -32 V
  • Collector Emitter Voltage
    -32 V
  • Continuous Collector Current
    -2 A
  • Pulse Collector Current
    -3 A
  • DC Current Gain
    120 to 270
  • Gain Bandwidth Product
    110 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    15 W
  • Output Capacitance
    26 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Application
    Ideal for Medium Power Switching or Amplification Applications.
  • Note
    Weight :- 0.34 grams, AEC-Q101 Qualified

Technical Documents
View details on the manufacturer's website
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