The MMDT5551-7-F from Diodes Incorporated is a NPN Transistor that is designed for medium power amplification and switching applications. It has a collector-emitter breakdown voltage of over 160 V, a base-emitter voltage saturation voltage of up to 1 V, and a collector-emitter saturation voltage of less than 0.2 V. This transistor has a continuous collector current of up to 200 mA. It is encapsulated in a molded plastic package with a UL 94V-0 flammability rating for high durability. This RoHS-compliant Epitaxial Planar transistor is available in a surface-mount package that measures 2.2 x 2.2 x 1.0 mm.