MMDT5551-7-F

Bipolar Junction Transistor by Diodes Incorporated (105 more products)

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MMDT5551-7-F Image

The MMDT5551-7-F from Diodes Incorporated is a NPN Transistor that is designed for medium power amplification and switching applications. It has a collector-emitter breakdown voltage of over 160 V, a base-emitter voltage saturation voltage of up to 1 V, and a collector-emitter saturation voltage of less than 0.2 V. This transistor has a continuous collector current of up to 200 mA. It is encapsulated in a molded plastic package with a UL 94V-0 flammability rating for high durability. This RoHS-compliant Epitaxial Planar transistor is available in a surface-mount package that measures 2.2 x 2.2 x 1.0 mm.

Product Specifications

Product Details

  • Part Number
    MMDT5551-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    160 V NPN Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    50 µA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    0.2 A
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    100 to 300 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Application
    Ideal for Medium Power Amplification and Switching.
  • Note
    Weight :- 0.06 grams, AEC-Q101 Qualified, Configuration :- Dual

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