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MMST4401-7-F

Bipolar Junction Transistor by Diodes Incorporated (105 more products)
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MMST4401-7-F Image

The MMST4401-7-F from Diodes Incorporated is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.75 to 1.2 V, Collector Base Voltage 60 V, Collector Emitter Breakdown Voltage 40 V, Collector Emitter Voltage 40 V. Tags: Surface Mount, NPN Transistor. More details for MMST4401-7-F can be seen below.

Product Specifications

Product Details

  • Part Number
    MMST4401-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, 0.6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.75 to 1.2 V
  • Collector Base Voltage
    60 V
  • Collector Emitter Breakdown Voltage
    40 V
  • Collector Emitter Voltage
    40 V
  • Continuous Collector Current
    0.6 A
  • DC Current Gain
    20 to 300
  • Gain Bandwidth Product
    250 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    8.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Note
    Weight :- 0.06 grams

Technical Documents
View details on the manufacturer's website
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