The KTB2630G-Y from KEC Semiconductor is an NPN Power Darlington Transistor that has been designed for the audio amplifier output stage. It has a collector-emitter breakdown voltage of over -150 V, a base-emitter voltage of up to -5 V, and a collector-emitter saturation voltage of less than -2.5 V. This transistor has a continuous collector current of up to -10 A and a pulsed collector current of less than 300 A. It functions complementary to KTD1630G and offers high power amplification for 100 W audio. This transistor offers high DC current gain and has wide SOA (safe operating area). It is available in a through-hole package that measures 39.9 x 15.6 x 4.8 mm and is ideal for the audio amplifier output stage, series regulator, and general-purpose applications.