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BDV66B

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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The BDV66B from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 5 mA, Collector Base Voltage 100 V, Collector Cut off Current 0.4 mA, Collector Emitter Voltage 100 V. Tags: Through Hole, PNP Transistor. More details for BDV66B can be seen below.

Product Specifications

Product Details

  • Part Number
    BDV66B
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    100 V, 16 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    0.4 mA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    16 A
  • Pulse Collector Current
    20 A
  • Gain Bandwidth Product
    6 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    125 W
  • Output Capacitance
    450 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247(3P)
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents
View details on the manufacturer's website
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