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MJ16008

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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MJ16008 Image

The MJ16008 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 1 mA, Collector Base Voltage 850 V, Collector Cut off Current 2.5 mA. Tags: Through Hole, NPN Transistor. More details for MJ16008 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJ16008
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    850 V, 8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    850 V
  • Collector Cut off Current
    2.5 mA
  • Collector Emitter Voltage
    450 V
  • Continuous Collector Current
    8 A
  • Pulse Collector Current
    16 A
  • DC Current Gain
    7
  • Industry
    Industrial, Commercial
  • Power Dissipation
    150 W
  • Output Capacitance
    350 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3
  • Application
    High Voltage, High Speed Power Switching Inductive Load Application

Technical Documents
View details on the manufacturer's website
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