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PBHV8118T-QR

Bipolar Junction Transistor by Nexperia (555 more products)
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PBHV8118T-QR Image

The PBHV8118T-QR from Nexperia is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 to 1.2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 400 V, Collector Cut off Current 10 µA. Tags: Surface Mount, NPN Transistor. More details for PBHV8118T-QR can be seen below.

Product Specifications

Product Details

  • Part Number
    PBHV8118T-QR
  • Manufacturer
    Nexperia
  • Description
    400 V, 1000 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 to 1.2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    400 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Voltage
    180 V
  • Continuous Collector Current
    1000 mA
  • Pulse Collector Current
    2 A
  • DC Current Gain
    50 to 250
  • Gain Bandwidth Product
    30 MHz
  • Industry
    Automotive, Industrial, Commercial
  • Power Dissipation
    300 mW
  • Output Capacitance
    5.7 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Application
    LED driver for LED chain module, LCD backlighting, Automotive power management, Hook switch for wired telecom, Switch Mode Power Supply (SMPS)
  • Dimension
    2.9 x 1.3 x 1 mm

Technical Documents
View details on the manufacturer's website
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