2SD2396-J

Bipolar Junction Transistor by SeCoS Corporation (664 more products)

Note : Your request will be directed to SeCoS Corporation.

2SD2396-J Image

The 2SD2396-J from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 100 µA, Collector Base Voltage 80 V, Collector Cut off Current 100 µA. Tags: Through Hole, NPN Transistor. More details for 2SD2396-J can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD2396-J
  • Manufacturer
    SeCoS Corporation
  • Description
    60 V, 3 A, NPN Medium Power Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    3 A
  • Gain Bandwidth Product
    40 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    2 W
  • Output Capacitance
    55 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO-220J

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