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SFT5011/5

Bipolar Junction Transistor by Solid State Devices (262 more products)
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SFT5011/5 Image

The SFT5011/5 from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 1 µA, Collector Base Voltage 600 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for SFT5011/5 can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT5011/5
  • Manufacturer
    Solid State Devices
  • Description
    600 V, 1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    1 µA
  • Collector Base Voltage
    600 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    600 V
  • Collector Emitter Voltage
    600 V
  • Continuous Collector Current
    1 A
  • DC Current Gain
    25 to 240
  • Gain Bandwidth Product
    10 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    7 W
  • Output Capacitance
    20 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-5

Technical Documents
View details on the manufacturer's website
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