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SFT5014G

Bipolar Junction Transistor by Solid State Devices (262 more products)
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SFT5014G Image

The SFT5014G from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 0.73 to 1 V, Emitter Cut off Current 20 µA, Collector Base Voltage 900 V, Collector Cut off Current 100 µA. Tags: Surface Mount, NPN Transistor. More details for SFT5014G can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT5014G
  • Manufacturer
    Solid State Devices
  • Description
    900 V, 0.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    0.73 to 1 V
  • Emitter Cut off Current
    20 µA
  • Collector Base Voltage
    900 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    900 V
  • Collector Emitter Voltage
    900 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    10 to 180
  • Gain Bandwidth Product
    30 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    17.5 W
  • Output Capacitance
    30 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Cerpack

Technical Documents
View details on the manufacturer's website
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