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HN4C51J

Bipolar Junction Transistor by Toshiba (135 more products)
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HN4C51J Image

The HN4C51J from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 0.1 µA, Collector Base Voltage 120 V, Collector Cut off Current 0.1 µA, Collector Emitter Voltage 120 V. Tags: Surface Mount, NPN Transistor. More details for HN4C51J can be seen below.

Product Specifications

Product Details

  • Part Number
    HN4C51J
  • Manufacturer
    Toshiba
  • Description
    120 V, 0.1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    0.1 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    0.1 µA
  • Collector Emitter Voltage
    120 V
  • Continuous Collector Current
    0.1 A
  • DC Current Gain
    200 to 700
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    300 mW
  • Output Capacitance
    3 pF
  • Operating Temperature
    -55 to 150 Deegre C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-25
  • Application
    Audio Frequency General Purpose Amplifier Applications.
  • Note
    Weight :- 0.014 g, Configuration :- Dual

Technical Documents
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