The TTC023 from Toshiba is a Silicon NPN Bipolar Transistor that has been designed for high-speed switching and DC-DC converter applications. It has a collector-emitter breakdown voltage of over 120 V, a base-emitter voltage of up to 7 V, and a collector-emitter saturation voltage of less than 0.19 V. This RoHS-compliant transistor has a continuous collector current of up to 3 A and a pulsed collector current of less than 6 A. It is available in a surface-mount package that measures 6.5 x 5.5 x 2.3 mm.
