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TTC5886A

Bipolar Junction Transistor by Toshiba (135 more products)
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TTC5886A Image

The TTC5886A from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 0.88 to 1.10 V, Emitter Cut off Current 100 nA, Collector Base Voltage 120 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for TTC5886A can be seen below.

Product Specifications

Product Details

  • Part Number
    TTC5886A
  • Manufacturer
    Toshiba
  • Description
    50 V, 5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    0.88 to 1.10 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    5 A
  • Pulse Collector Current
    10 A
  • DC Current Gain
    280 to 1000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    20 W
  • Output Capacitance
    24 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    New PW-Mold
  • Application
    High-Speed Switching, DC-DC Converters.
  • Note
    Weight :- 0.36 g

Technical Documents
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