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TTD1415B

Bipolar Junction Transistor by Toshiba (135 more products)
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TTD1415B Image

The TTD1415B from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.5 to 2 V, Emitter Cut off Current 3 mA, Collector Base Voltage 120 V, Collector Cut off Current 2 µA. Tags: Through Hole, NPN Transistor. More details for TTD1415B can be seen below.

Product Specifications

Product Details

  • Part Number
    TTD1415B
  • Manufacturer
    Toshiba
  • Description
    100 V, 7 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.5 to 2 V
  • Emitter Cut off Current
    3 mA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    2 µA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    7 A
  • Pulse Collector Current
    10 A
  • DC Current Gain
    1000 to 15000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    25 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220SIS
  • Application
    High-Power Switching, Hammer Drivers.
  • Note
    Weight :- 1.7 g

Technical Documents
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