The BUJ103AD from WeEN Semiconductors is a Silicon Diffused NPN Transistor. It has a collector-emitter breakdown voltage of over 400 V, a base-emitter saturation voltage of up to 1.5 V, and a collector-emitter saturation voltage of less than 1 V. This transistor has a DC collector current of up to 4 A and a peak collector current of less than 8 A. It offers low thermal resistance. This transistor is available in a surface-mount package that is ideal for fast-switching applications such as electronic lighting ballasts, DC-DC converters, inverters, and motor control systems.