CCSPG1060N

GaN Power Transistor by Central Semiconductor (8 more products)

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The CCSPG1060N from Central Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 2.4 to 5.5 milli-ohm, Continous Drain Current 60 A, Total Charge 9.2 nC. Tags: Surface Mount. More details for CCSPG1060N can be seen below.

Product Specifications

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Product Details

Part Number
CCSPG1060N
Manufacturer
Central Semiconductor
Description
100 V, 60 A, GaN Transistor

General

Configuration

Dual
Industry

Commercial, Industrial
Gate Threshold Voltage

0.8 to 2.5 V
Drain Source Voltage

100 V
Drain Source Resistance

2.4 to 5.5 milli-ohm
Continous Drain Current

60 A
Total Charge

9.2 nC
Input Capacitance

1000 pF
Output Capacitance

460 pF
Temperature operating range

-40 to 150 Degree C
RoHS Compliant

Yes
Package Type

Surface Mount
Package

CSP3.5X2
Applications

EV charging stations, Microinverters, and highly efficient fast-charging power blocks