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CPG003-CDFG6511N

GaN Power Transistor by Central Semiconductor (8 more products)
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The CPG003-CDFG6511N from Central Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 138 to 300 milli-ohm, Continous Drain Current 11.5 A, Pulsed Drain Current 20.5 A. Tags: Die. More details for CPG003-CDFG6511N can be seen below.

Product Specifications

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Product Details

  • Part Number
    CPG003-CDFG6511N
  • Manufacturer
    Central Semiconductor
  • Description
    650 V, 11.5 A, GaN Transistor

General

  • Industry
    Military, Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    138 to 300 milli-ohm
  • Continous Drain Current
    11.5 A
  • Pulsed Drain Current
    20.5 A
  • Total Charge
    2.8 nC
  • Output Capacitance
    60 pF
  • Turn-on Delay Time
    1.4 ns
  • Turn-off Delay Time
    1.7 ns
  • Rise Time
    4 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    Low gate charge, Low output charge and ultra high switching frequency applications

Technical Documents
View details on the manufacturer's website
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