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EPC2015C

GaN Power Transistor by Efficient Power Conversion (95 more products)
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The EPC2015C from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 3.2 to 4 milli-ohm, Continous Drain Current 53 A, Pulsed Drain Current 235 A. Tags: Die. More details for EPC2015C can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2015C
  • Manufacturer
    Efficient Power Conversion
  • Description
    40 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    3.2 to 4 milli-ohm
  • Continous Drain Current
    53 A
  • Pulsed Drain Current
    235 A
  • Total Charge
    8.7 to 11.2 nC
  • Input Capacitance
    980 to 1180 pF
  • Output Capacitance
    710 to 1070 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High Frequency DC-DC Conversion, Point-of-Load Converters, Industrial Automation, Synchronous Rectification, Class-D Audio, Low Inductance Motor Drives
  • Dimensions
    4.1 x 1.6 mm

Technical Documents
View details on the manufacturer's website
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