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EPC2039

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2039 Image

The EPC2039 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 80 V, Drain Source Resistance 20 to 25 milli-ohm, Continous Drain Current 6.8 A, Pulsed Drain Current 50 A. Tags: Die. More details for EPC2039 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2039
  • Manufacturer
    Efficient Power Conversion
  • Description
    80 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    20 to 25 milli-ohm
  • Continous Drain Current
    6.8 A
  • Pulsed Drain Current
    50 A
  • Total Charge
    1910 to 2370 nC
  • Input Capacitance
    210 to 260 pF
  • Output Capacitance
    115 to 175 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    Ultra High Speed DC-DC Conversion, Wireless Power Transfer, Lidar/Pulsed Power Applications Sensing (Lidar)
  • Dimensions
    1.35 x 1.35 mm

Technical Documents
View details on the manufacturer's website
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