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EPC2055

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2055 Image

The EPC2055 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 3 to 3.6 milli-ohm, Continous Drain Current 29 A, Pulsed Drain Current 161 A. Tags: Die. More details for EPC2055 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2055
  • Manufacturer
    Efficient Power Conversion
  • Description
    40 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    3 to 3.6 milli-ohm
  • Continous Drain Current
    29 A
  • Pulsed Drain Current
    161 A
  • Total Charge
    6.6 to 8.5 nC
  • Input Capacitance
    841 to 1111 pF
  • Output Capacitance
    408 to 612 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High Frequency DC-DC Conversion, Point-of-Load Converters, Industrial Automation, Class-D Audio
  • Dimensions
    2.5 x 1.5 mm

Technical Documents
View details on the manufacturer's website
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