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EPC2105

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2105 Image

The EPC2105 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 80 V, Drain Source Resistance 2.4 to 14.5 milli-ohm, Continous Drain Current 10 to 40 A, Pulsed Drain Current 70 to 300 A. Tags: Die. More details for EPC2105 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2105
  • Manufacturer
    Efficient Power Conversion
  • Description
    80 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Half Bridge
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    2.4 to 14.5 milli-ohm
  • Continous Drain Current
    10 to 40 A
  • Pulsed Drain Current
    70 to 300 A
  • Total Charge
    2.7 to 15 nC
  • Input Capacitance
    300 to 1410 pF
  • Output Capacitance
    170 to 1170 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    High Frequency DC-DC
  • Dimensions
    6.05 x 2.3 mm

Technical Documents
View details on the manufacturer's website
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