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EPC2108

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2108 Image

The EPC2108 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 60 to 100 V, Drain Source Resistance 150 to 3300 milli-ohm, Continous Drain Current 0.5 to 1.7 A, Pulsed Drain Current 0.5 to 5.5 A. Tags: Die. More details for EPC2108 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2108
  • Manufacturer
    Efficient Power Conversion
  • Description
    60 to 100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Half Bridge
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    60 to 100 V
  • Drain Source Resistance
    150 to 3300 milli-ohm
  • Continous Drain Current
    0.5 to 1.7 A
  • Pulsed Drain Current
    0.5 to 5.5 A
  • Total Charge
    44 to 310 nC
  • Input Capacitance
    7 to 31 pF
  • Output Capacitance
    1.6 to 24 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    High Frequency DC-DC conversion, Class-D Audio, Wireless Power
  • Dimensions
    1.35 x 1.35 mm

Technical Documents
View details on the manufacturer's website
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