The EPC2204A from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for DC-DC converters, isolated DC-DC converters, LiDAR, point-of-load (POL) converters, USB-C, LED lighting, Class-D audio, E-mobility applications. It has a drain-source voltage of over 80 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of less than 6 milli-ohms. This transistor has a continuous drain current of up to 29 A and a pulsed drain current of less than 125 A. It is based on GaN technology that offers high electron mobility and has a low-temperature coefficient, thereby resulting in a very low drain-source on-resistance. This RoHS-compliant transistor has a lateral structure that provides an exceptionally low gate charge and integrates a majority carrier diode that ensures zero reverse recovery charge. It is available as a die that measures 2.5 x 1.5 mm.