1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Infineon Technologies
  6. IGLR60R190D1

IGLR60R190D1

GaN Power Transistor by Infineon Technologies (46 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

The IGLR60R190D1 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 140 to 260 milli-ohm, Continous Drain Current 12.8 A, Pulsed Drain Current 23 A. Tags: Surface Mount. More details for IGLR60R190D1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGLR60R190D1
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 140 to 260 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    140 to 260 milli-ohm
  • Continous Drain Current
    12.8 A
  • Pulsed Drain Current
    23 A
  • Total Charge
    3.2 nC
  • Input Capacitance
    157 pF
  • Output Capacitance
    28 pF
  • Turn-on Delay Time
    16 ns
  • Turn-off Delay Time
    13 ns
  • Rise Time
    12 ns
  • Fall Time
    14 ns
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TSON-8
  • Applications
    Telecom, Datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC)

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products