The TP65H300G4LSG from Transphorm is an Enhancement Mode SuperGaN FET Power Transistor. It has a gate threshold voltage of 2.1 V, drain-source voltage of over 650 V, and a drain-source on-resistance of less than 312 mΩ. This power transistor has a continuous drain current of up to 6.5 A and a pulsed drain current of less than 30 A. It is based on Transphorm’s Gen IV platform and is a normally-off device. This transistor combines state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET resulting in superior reliability and performance.

The Gen IV platform integrated into this transistor utilizes advanced epi and patented design technologies to simplify manufacturability while improving efficiency over its counterpart, silicon. It offers intrinsic lifetime testing, a wide gate safety margin, and transient over-voltage capability, thereby enabling a robust transistor design. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 8 x 8 mm and is ideal for power adapters, low-power SMPS, consumer, and lighting applications.