The GPI65005DF from GaNPower International is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for server and telecom power applications, EVOBC and DC-DC converters, UPS, inverters, PV, and switching power applications. This transistor has a drain-source breakdown voltage of 650 V, a gate threshold voltage of 1.25 V, and a drain-source on-resistance of 235 milli-ohms. It has a continuous drain current of up to 5 A and a pulsed drain current of 11 A. This normally-off transistor is based on GaNPower’s proprietary E-mode GaN-on-silicon technology, which provides low on-state resistance, high dv/dt capability, extremely low input capacitance, and zero recovery charge for applications requiring exceptional efficiency, ultra-high switching frequency, and improved power density. It is available in a surface-mount package that measures 5 x 6 mm.