The EPC7018 from Efficient Power Conversion is a Radiation Hard eGaN Power Transistor. It has a drain-to-source voltage of over 100 V, a gate-to-source voltage of up to 6 V, and a drain-source on-resistance of 2.7 mΩ. This GaN power transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 345 A. It has exceptionally high electron mobility and low-temperature coefficient that results in a very low drain-source on-resistance. This transistor consists of a lateral structure that provides a very low gate charge and offers an extremely fast switching time. It is available as a passivated die that measures 6.05 x 2.3 mm and is ideal for deep space probes, high-frequency radiation-hard DC-DC converters, radiation hard motor drives, space applications: DC-DC power, motor drives, lidar, ion thrusters, commercial satellite EPS, and avionics applications.