The IGLR60R260D1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor. This transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.6 V, and a drain-source on-resistance of 370 milli-ohms. It has a continuous drain current of up to 10.4 A and a pulsed drain current of less than 15.9 A. This normally-off GaN transistor has a low gate charge and output charge in addition to zero reverse-recovery charge. It offers superior commutation ruggedness, reduced electromagnetic interference (EMI), improved system and power efficiency, and enables higher operating frequency. This JEDEC-qualified power transistor exhibits ultra-fast switching and is capable of reverse conduction. It is available in a surface-mount package that measures 6 x 5 x 1.1 mm and is ideal for industrial and consumer SMPS (based on the half-bridge topology) applications.