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INN700DA480B

GaN Power Transistor by Innoscience (83 more products)
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The INN700DA480B from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 700 V, Drain Source Resistance 365 to 790 milli-ohm, Continous Drain Current 5 A, Pulsed Drain Current 9 A. Tags: Surface Mount. More details for INN700DA480B can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN700DA480B
  • Manufacturer
    Innoscience
  • Description
    700 V, 365 to 790 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    700 V
  • Drain Source Resistance
    365 to 790 milli-ohm
  • Continous Drain Current
    5 A
  • Pulsed Drain Current
    9 A
  • Total Charge
    1.3 nC
  • Input Capacitance
    43 pF
  • Output Capacitance
    13 pF
  • Turn-on Delay Time
    2 ns
  • Turn-off Delay Time
    3 ns
  • Rise Time
    5 ns
  • Fall Time
    7 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    AC-DC converters, DC-DC converters, Totem pole PFC, Fast battery charging, High density power conversion, High efficiency power conversion
  • Dimensions
    5 x 6 mm

Technical Documents
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