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IGLD60R190D1

GaN Power Transistor by Infineon Technologies (46 more products)
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IGLD60R190D1 Image

The IGLD60R190D1 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 190 milli-ohm, Continous Drain Current 10 A, Pulsed Drain Current 13.5 to 23 A. Tags: Surface Mount. More details for IGLD60R190D1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGLD60R190D1
  • Manufacturer
    Infineon Technologies
  • Description
    Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    190 milli-ohm
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    13.5 to 23 A
  • Total Charge
    3.2 nC
  • Input Capacitance
    157 pF
  • Output Capacitance
    28 pF
  • Turn-on Delay Time
    11 ns
  • Turn-off Delay Time
    12 ns
  • Rise Time
    5 ns
  • Fall Time
    12 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-LSON-8-1
  • Applications
    Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback).

Technical Documents
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