The EPC7014UB from EPC Space is a Radiation Hard GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. This transistor has a drain-to-source voltage of up to 60 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 580 mΩ. It has a continuous drain current of up to 1 A and a pulsed drain current of less than 4 A. This power transistor has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain-source on-resistance value and has an ultra-low gate charge, resulting in high efficiency. The lateral structure of this transistor offers a very low gate charge (Q_G) and extremely fast switching times, enabling faster power supply switching frequencies to achieve higher power density, higher efficiency, and a relatively compact package design. This power transistor is available in a surface-mount package that measures 2.9 x 2.4 x 1.2 mm and is ideal for commercial satellite EPS and avionics, deep space probes, high-speed Rad Hard DC-DC Conversion, rad-hard motor controllers, and nuclear facilities applications.