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EPC2110

GaN Power Transistor by Efficient Power Conversion (95 more products)
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The EPC2110 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 120 V, Drain Source Resistance 80 to 110 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 20 A. Tags: Die. More details for EPC2110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2110
  • Manufacturer
    Efficient Power Conversion
  • Description
    120 V GaN Enhancement Transistor

General

  • Configuration
    Dual
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    120 V
  • Drain Source Resistance
    80 to 110 milli-ohm
  • Continous Drain Current
    3.4 A
  • Pulsed Drain Current
    20 A
  • Total Charge
    0.8 to 1.1 nC
  • Input Capacitance
    85 to 100 pF
  • Output Capacitance
    45 to 70 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    Ultra High Frequency DC-DC Conversion, Wireless Power Transfer, Synchronous Rectification
  • Dimensions
    1.35 x 1.35 mm

Technical Documents
View details on the manufacturer's website
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